| PART |
Description |
Maker |
| 2N4922 2N4921 2N4923 2N4921-D |
Medium-Power Plastic NPN Silicon Transistors
1 AMPERE GENERAL PURPOSE POWER TRANSISTORS 30 WATTS
|
ONSEMI[ON Semiconductor]
|
| MJE13002 MJE13003 |
1.400W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 1.500A Ic, 8 - 40 hFE.
NPN EPITAXIAL SILICON POWER TRANSISTORS
|
Continental Device India Limited
|
| 2N5655 2N5656 2N5657 |
Power 1A 350V NPN
POWER TRANSISTORS NPN SILICON
Plastic NPN Silicon High-Voltage Power Transistor
|
ONSEMI[ON Semiconductor]
|
| BD679 BD681 BD677 BD679A BD675A BD677A BD675 |
NPN PLASTIC POWER DARLINGTON TRANSISTORS
|
TRANSYS Electronics Limited
|
| MJE344 |
Plastic NPN Silicon Medium-Power Transistors
|
New Jersey Semi-Conduct...
|
| TIP10011 |
NPN Plastic Medium-Power Silicon Transistors
|
Micro Commercial Components
|
| 2N6038G |
Plastic Darlington Complementary Silicon Power Transistors 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-225AA
|
ON Semiconductor
|
| BD437 BD441 ON0194 |
From old datasheet system
4.0 AMPERES POWER TRANSISTORS
Plastic Medium Power Silicon NPN Transistor
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| CJD3439 |
NPN SILICON PLASTIC HIGH VOLTAGE POWER TRANSISTORS NPN硅塑料高压功率晶体管
|
Continental Device India, Ltd.
CDIL[Continental Device India Limited]
|
| 2DD1766P 2DD1766P-13 2DD1766R-13 2DD1766Q-13 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V
2 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR GREEEN, PLASTIC, SOT89-3L, 4 PIN
NPN SURFACE MOUNT TRANSISTOR
|
Diodes, Inc.
Diodes Incorporated
|
| MJW16110 MJ16110 ON1988 |
POWER TRANSISTORS 15 AMPERES 400 VOLTS 175 AND 135 WATTS 15 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-247AE
From old datasheet system
NPN Silicon Power Transistors
|
Motorola Mobility Holdings, Inc.
http://
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
